Vapor-solid-solid radial growth of Ge nanowires

被引：18
|
作者：
Li, C. B. [1 ,2 ]
Usami, K. [1 ,2 ,3 ]
Mizuta, H. [3 ,4 ,5 ]
Oda, S. [1 ,2 ,3 ]
机构：
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
[2] Japan Soc Promot Sci, Meguro Ku, Tokyo 1528552, Japan
[3] Japan Sci & Technol Agcy, Solut Oriented Res Sci & Technol, Kawaguchi, Saitama 3320012, Japan
[4] Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England
[5] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 04期
关键词：
SILICON NANOWIRES; TEMPERATURE; ORIENTATION; EPITAXY; ARRAYS; GOLD;
D O I：
10.1063/1.3204471
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The radial growth of Ge nanowire via chemical vapor deposition is discussed in detail. Vapor-solid-solid (VSS) growth mechanism is believed to dominate the nanowire growth in radial direction, which contributes to the increase of the diameter of nanowire. After the Au catalysts on the tip are consumed for a long growth time, the nanowire with a rough surface will be grown due to the selective VSS radial growth. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3204471]
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页数：3
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