Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

被引:9
|
作者
Zhu, Zhongyunshen [1 ,2 ,3 ]
Song, Yuxin [1 ]
Zhang, Zhenpu [1 ,2 ]
Sun, Hao [1 ]
Han, Yi [1 ,3 ]
Li, Yaoyao [1 ]
Zhang, Liyao [1 ]
Xue, Zhongying [1 ]
Di, Zengfeng [1 ]
Wang, Shumin [1 ,2 ,4 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100190, Peoples R China
[4] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
关键词
GERMANIUM NANOWIRES; ORIENTATION; CATALYSTS; SILICON; GOLD;
D O I
10.1063/1.4990602
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of similar to 180 degrees C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six < 110 > growth orientations were observed on Ge (110) by the VSS growth at similar to 180 degrees C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes. Published by AIP Publishing.
引用
收藏
页数:7
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