Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

被引：0
|
作者：
Zhang, Dongli [1 ,2 ]
Wang, Mingxiang [1 ]
Wong, Man [2 ]
Kwok, Hoi-Sing [2 ]
机构：
[1] Soochow Univ, Dept Microelect, Suzhou 215006, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Ctr Display Res, Kowloon, Hong Kong, Peoples R China
来源：
CHINESE PHYSICS B | 2017年 / 26卷 / 01期
基金：
中国国家自然科学基金;
关键词：
metal-induced crystallization; poly-Si; nickel; diffusion coefficient; THIN-FILM-TRANSISTOR; GRAIN SILICON; PERFORMANCE; SI; GROWTH;
D O I：
10.1088/1674-1056/26/1/016601
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Crystallization of amorphous silicon (a-Si) which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization (MIC) polycrystalline silicon (poly-Si) regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84 x 10(-9) cm(2)/s at 550 degrees C is estimated for the trace nickel diffusion in a-Si.
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页数：4
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