A 270-GHz CMOS Triple-Push Ring Oscillator With a Coupled-Line Matching Network

被引：12

作者：

Kim, Sooyeon ^{[1
]}

Yoon, Daekeun ^{[2
]}

Rich, Jae-Sung ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 02841, South Korea

[2] Natl Chiao Tung Univ, Int Coll Semicond & Technol, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | 2019年 / 9卷 / 05期

关键词：

complementary metal-oxide-semiconductor (CMOS); coupled lines; harmonic generation; millimeter wave; oscillators; ring oscillators; submillimeter wave; terahertz; triple push; HIGH-EFFICIENCY; DESIGN; VCO;

D O I：

10.1109/TTHZ.2019.2923556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A design procedure is proposed for triple-push ring oscillators, and an oscillator employing a coupled line-matching network is developed following the procedure. This stepwise procedure, which uses power-dependent Z-parameters of transistors, is applied to the design of each amplifier stage constituting a ring oscillator based on its steady-state oscillation condition. It is verified with both L-section and T-section topologies assumed for the load of the amplifier stages of a given triple-push ring oscillator, and the differences between the two topologies are compared. Based on the procedure, a 270 GHz triple-push ring oscillator that employs coupled lines for matching networks has been developed in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The circuit benefits from the advantages of coupled lines such as compact area and simplified layout. The fabricated oscillator exhibits a measured oscillation frequency of around 270 GHz and output power of -10.9 dBm, with phase noise of -96 dBc/Hz at 10 MHz offset.

引用

页码：449 / 462

页数：14

共 37 条

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