A 210GHz Triple-Push Oscillator in 90nm CMOS

被引:0
|
作者
Hsieh, Cuei-Ling [1 ]
Liu, Jenny Yi-Chun [1 ]
机构
[1] Natl Tsing Hua Univ, Hsinchu, Taiwan
关键词
CMOS; millimeter-wave; oscillators; phase noise; triple-push;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A compact millimeter-wave oscillator in 90nm CMOS is presented. The proposed triple-push three-stage mutually coupled ring oscillator architecture significantly enhances the phase noise, output power, and power consumption. The measured phase noise is -114dBc/Hz at 10MHz offset with 28.6mW DC power consumption. The tuning range spans from 204.3GHz to 215GHz with the maximum output power of -7dBm at 210.8GHz. The FOM is -185.8dBc/Hz at 10MHz offset, and it remains below -179dBc/Hz within the entire tuning range.
引用
收藏
页码:1345 / 1348
页数:4
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