Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy

被引：47

作者：

Kawaguchi, Takahiko ^{[1
,3
]}

Uemura, Hiroki ^{[1
,3
]}

Ohno, Toshiya ^{[1
]}

Watanabe, Ryotaro ^{[1
,3
]}

Tabuchi, Masao ^{[2
,3
]}

Ujihara, Toru ^{[1
,3
]}

Takenaka, Koshi ^{[1
,3
]}

Takeda, Yoshikazu ^{[1
,3
]}

Ikuta, Hiroshi ^{[1
,3
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Venture Business Lab VBL, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Japan Sci & Technol Agcy, TRIP, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 09期

基金：

日本科学技术振兴机构;

关键词：

SUPERCONDUCTIVITY;

D O I：

10.1143/APEX.2.093002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The X-ray diffraction pattern of the film prepared with the optimum growth condition showed no indication of impurity phases. Only (001) peaks were observed, indicating that NdFeAsO was grown with the c-axis perpendicular to the substrate. The window of optimum growth condition was very narrow, but the NdFeAsO phase was grown with a very good reproducibility. Despite the absence of any appreciable secondary phase, the resistivity showed an increase with decreasing temperature. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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