Epitaxial growth and strain relaxation of MgO thin films on Si grown by molecular beam epitaxy

High quality epitaxial MgO thin films have been grown on Si (001) wafers by molecular beam epitaxy using SrTiO3 (STO) as a buffer layer. The STO buffer layer reduces both the large lattice mismatch of 23% and the large thermal mismatch of 520% between MgO and Si. X-ray diffraction (XRD) measurements indicate that the MgO film grown on the STO buffered Si is epitaxial with MgO (002)vertical bar vertical bar Si (004) and MgO [110]vertical bar vertical bar Si [002]. The full width at half maximum (FWHM) of MgO (002) rocking curve width Delta omega is 0.30 degrees (out-of-plane), and the FWHM of MgO (202) phi angle scan width Delta phi is 0.34 degrees (in-plane) for a 155 nm thick film. Strain relaxation and growth mechanisms of the MgO film on Si were studied by in situ reflection high-energy electron diffraction (RHEED) analysis in combination with XRD and atomic force microscopy. The results indicate that the MgO first forms a pseudomorphic wetting layer and subsequently undergoes a Stranski-Krastanov transition to form three-dimensional coherent islands to relieve misfit strain. A decrease in the width of the RHEED spots with increasing MgO thickness is observed that is attributed to reduction of coherency strain. A smooth surface redevelops once MgO growth continues, which is attributed to island coalescence. (c) 2006 American Vacuum Society.