On-chip electron-impact ion source using carbon nanotube field emitters

被引:59
|
作者
Bower, Christopher A. [1 ]
Gilchrist, Kristin H.
Piascik, Jeffrey R.
Stoner, Brian R.
Natarajan, Srividya
Parker, Charles B.
Wolter, Scott D.
Glass, Jeffrey T.
机构
[1] RTI Int, Ctr Mat & Elect Technol, Res Triangle Pk, NC 27709 USA
[2] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2715457
中图分类号
O59 [应用物理学];
学科分类号
摘要
A lateral on-chip electron-impact ion source utilizing a carbon nanotube field emission electron source was fabricated and characterized. The device consists of a cathode with aligned carbon nanotubes, a control grid, and an ion collector electrode. The electron-impact ionization of He, Ar, and Xe was studied as a function of field emission current and pressure. The ion current was linear with respect to gas pressure from 10(-4) to 10(-1) Torr. The device can operate as a vacuum ion gauge with a sensitivity of approximately 1 Torr(-1). Ion currents in excess of 1 mu A were generated. (c) 2007 American Institute of Physics.
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页数:3
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