共 50 条
- [3] Thickness-dependent Schottky barrier height of MoS2 field-effect transistors [J]. NANOSCALE, 2017, 9 (18) : 6151 - 6157
- [8] Impact of device scaling on the electrical properties of MoS2 field-effect transistors [J]. Scientific Reports, 11
- [9] Thickness-dependent microstructures and electrical properties of LiTaO3 thin films prepared by a sol-gel process [J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2007, 21 (18-19): : 3404 - 3411
- [10] Effect of ultrathin Fe dusting layer on electrical transport properties of few-layer MoS2 field-effect transistors [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (04):