Thickness-Dependent Electrical Properties of MoS2 Field-Effect Transistors Fabricated on Sol-Gel Prepared AlOx Layer

被引:2
|
作者
Ma, Jiyeon [1 ]
Yoo, Geonwook [1 ]
机构
[1] Soongsil Univ, Sch Elect Engn, Seoul 06978, South Korea
关键词
Molybdenum Disulfide; Solution-Process; High-k; Gate-Dielectric; GATE DIELECTRICS; PERFORMANCE; TEMPERATURE;
D O I
10.1166/jnn.2018.15588
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Solution-processed high-k oxide layer, which is typically deposited using atomic layer deposition (ALD), has been proposed and recently demonstrated on molybdenum disulfide (MoS2) field-effect transistors (FETs). In this report, we statistically investigate electrical performance of multilayer MoS2 FETs fabricated on sol-gel AlOX gate-dielectric. More than 10 sample devices with different MoS2 thickness are characterized and compared. For electrical parameters extraction, Y-function method is adopted in order to minimize S/D electrode contact-induced variations. In spite of the relatively rougher surface of the sol-gel AlOX film, no significant difference of electrical performance is observed. The sol-gel prepared AlOX can be considered as a promising high-k gate dielectric for high-performance large-area transistion metal dichalcogenides (TMDs) devices fabrication.
引用
收藏
页码:5986 / 5990
页数:5
相关论文
共 50 条
  • [1] Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility
    Yang, Rui
    Wang, Zenghui
    Feng, Philip X. -L.
    [J]. NANOSCALE, 2014, 6 (21) : 12383 - 12390
  • [2] Thickness-dependent charge transport in few-layer MoS2 field-effect transistors
    Lin, Ming-Wei
    Kravchenko, Ivan I.
    Fowlkes, Jason
    Li, Xufan
    Puretzky, Alexander A.
    Rouleau, Christopher M.
    Geohegan, David B.
    Xiao, Kai
    [J]. NANOTECHNOLOGY, 2016, 27 (16)
  • [3] Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
    Kwon, Junyoung
    Lee, Jong-Young
    Yu, Young-Jun
    Lee, Chul-Ho
    Cui, Xu
    Honed, James
    Lee, Gwan-Hyoung
    [J]. NANOSCALE, 2017, 9 (18) : 6151 - 6157
  • [4] Channel Thickness-Dependent Degradation of Field-Effect Mobility in Multilayer MoS2 Transistors
    Jeon, Dae-Young
    Joo, Soyun
    Lee, Dahyun
    Hong, Seungbum
    [J]. ACS APPLIED ELECTRONIC MATERIALS, 2023, 6 (01) : 465 - 471
  • [5] Effect of thickness-dependent structural defects on electrical stability of MoS2 thin film transistors
    Park, Ji-In
    Jang, Yujin
    Bae, Jong-Seong
    Yoon, Jang-Hee
    Lee, Hyun Uk
    Wakayama, Yutaka
    Kim, Jong-Pil
    Jeong, Yesul
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 814
  • [6] Impact of device scaling on the electrical properties of MoS2 field-effect transistors
    Arutchelvan, Goutham
    Smets, Quentin
    Verreck, Devin
    Ahmed, Zubair
    Gaur, Abhinav
    Sutar, Surajit
    Jussot, Julien
    Groven, Benjamin
    Heyns, Marc
    Lin, Dennis
    Asselberghs, Inge
    Radu, Iuliana
    [J]. SCIENTIFIC REPORTS, 2021, 11 (01)
  • [7] Layer thickness-dependent phonon properties and thermal conductivity of MoS2
    Gu, Xiaokun
    Li, Baowen
    Yang, Ronggui
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 119 (08)
  • [8] Impact of device scaling on the electrical properties of MoS2 field-effect transistors
    Goutham Arutchelvan
    Quentin Smets
    Devin Verreck
    Zubair Ahmed
    Abhinav Gaur
    Surajit Sutar
    Julien Jussot
    Benjamin Groven
    Marc Heyns
    Dennis Lin
    Inge Asselberghs
    Iuliana Radu
    [J]. Scientific Reports, 11
  • [9] Thickness-dependent microstructures and electrical properties of LiTaO3 thin films prepared by a sol-gel process
    Kao, M. C.
    Chen, H. Z.
    Young, S. L.
    Lin, C. C.
    Yu, C. C.
    [J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2007, 21 (18-19): : 3404 - 3411
  • [10] Effect of ultrathin Fe dusting layer on electrical transport properties of few-layer MoS2 field-effect transistors
    Wang, Ying
    Qi, Long
    Wu, Yihong
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (04):