Behaviors of group Va elements in ZnSe

被引：6

作者：

Wang, J. F. ^{[1
]}

Oh, C. B. ^{[1
]}

Isshiki, M. ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 297卷 / 01期

基金：

日本学术振兴会;

关键词：

doping; Bridgman technique; metal-organic chemical vapor deposition; semiconducting II-VI materials;

D O I：

10.1016/j.jcrysgro.2006.09.023

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Nitrogen (N) doped ZnSe homoepitaxial films and bulk single crystals doped with phosphorus (P), antimony (Sb) and bismuth (Bi), have been grown by metal-organic chemical vapor deposition (MOCVD) and Bridgman method, respectively. By examining photoluminescence (PL) spectra at low temperature, it is found that group Va elements act as both shallow acceptor and deep donor. To enhance the net acceptor concentration, ZnSe:Va specimens are annealed at different temperatures. The experimental results show that doped Va elements except P are activated remarkably. The C-V measurements show that the highest net acceptor concentration is 6.7 x 10(17) cm(-3) in ZnSe:N. Furthermore, the ionization energies of Va elements as acceptors and deep donor complexes are estimated. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：95 / 99

页数：5

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