A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5

被引：22
|
作者：
Lee, Suyoun [1 ]
Jeong, Doo Seok [1 ]
Jeong, Jeung-hyun [1 ]
Zhe, Wu [1 ,2 ]
Park, Young-Wook [1 ,3 ]
Ahn, Hyung-Woo [1 ]
Cheong, Byung-ki [1 ]
机构：
[1] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 136791, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[3] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期
关键词：
antimony compounds; chalcogenide glasses; germanium compounds; hopping conduction; tellurium compounds; PHASE-CHANGE MEMORIES; AMORPHOUS-SEMICONDUCTORS; CHALCOGENIDE GLASSES; THIN-FILMS; MECHANISM;
D O I：
10.1063/1.3275756
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the temperature dependence of the threshold switching characteristics of a memory-type chalcogenide material, Ge2Sb2Te5. We found that the threshold voltage (V-th) decreased linearly with temperature, implying the existence of a critical conductivity of Ge2Sb2Te5 for its threshold switching. In addition, we investigated the effect of bias voltage and temperature on the delay time (t(del)) of the threshold switching of Ge2Sb2Te5 and described the measured relationship by an analytic expression which we derived based on a physical model where thermally activated hopping is a dominant transport mechanism in the material.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Notes on Reproducibility of Ge2Sb2Te5 Properties
    Tanaka, Keiji
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (06):
  • [32] Martensitic transformation in Ge2Sb2Te5 alloy
    Zhang, Wei
    Jeong, Hong Sik
    Song, Se Ahn
    ADVANCED ENGINEERING MATERIALS, 2008, 10 (1-2) : 67 - 72
  • [33] Hall mobility of amorphous Ge2Sb2Te5
    Baily, S. A.
    Emin, David
    Li, Heng
    SOLID STATE COMMUNICATIONS, 2006, 139 (04) : 161 - 164
  • [34] Multiresistance Characteristics of PCRAM With Ge1Cu2Te3 and Ge2Sb2Te5 Films
    Saito, Yuta
    Song, Yun Heub
    Lee, Jung Min
    Sutou, Yuji
    Koike, Junichi
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (10) : 1399 - 1401
  • [35] Optical switching and related structural properties of epitaxial Ge2Sb2Te5 films
    Gericke, F.
    Flissikowski, T.
    Laehnemann, J.
    Katmis, F.
    Braun, W.
    Riechert, H.
    Grahn, T.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (11)
  • [36] Density functional study of the TiN/Ge2Sb2Te5 interface
    Mandelli, D.
    Caravati, S.
    Bernasconi, M.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2012, 249 (11): : 2140 - 2144
  • [37] Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires
    Park, Sungjin
    Park, Dambi
    Jeong, Kwangsik
    Kirn, Taeok
    Park, SeungJong
    Ahn, Min
    Yang, Won Jun
    Han, Jeong Hwa
    Jeong, Hong Sik
    Jeon, Seong Gi
    Song, Jae Yong
    Cho, Mann-Ho
    ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (39) : 21819 - 21827
  • [38] Influence of doping upon the phase change characteristics of Ge2Sb2Te5
    K. Wang
    C. Steimer
    D. Wamwangi
    S. Ziegler
    M. Wuttig
    J. Tomforde
    W. Bensch
    Microsystem Technologies, 2007, 13 : 203 - 206
  • [39] Ge2Sb2Te5 film deposition and properties
    Ye, Mengqi
    Tao, Rong
    Ding, Peijun
    Bello, Abner
    MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II, 2007, 997 : 313 - 316
  • [40] Bipolar resistive switching behavior of an amorphous Ge2Sb2Te5 thin films with a Te layer
    Yoo, Sijung
    Eom, Taeyong
    Gwon, Taehong
    Hwang, Cheol Seong
    NANOSCALE, 2015, 7 (14) : 6340 - 6347
12345