Unipolar Memory Operation of Resistance Random-Access Memory Using Compliance Current Controller

In this paper, we investigate the effect of temperature on the unipolar switching characteristics of a resistance random-access memory (RRAM) that uses poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films. The set voltage required for a transition from an off-state to an on-state was found to decrease as the temperature of the RRAM increases. This phenomenon is explained by the formation of filaments caused by the Joule heating effect. We propose a new method of controlling the compliance current for unipolar switching, demonstrating that the PEDOT:PSS-based RRAM can perform reproducible "write-read-erase-read" cyclic unipolar memory operations for nonvolatile memory application. (C) 2009 The Japan Society of Applied Physics