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Demonstration of a Ti:sapphire mode-locked laser pumped directly with a green diode laser

被引：46
|
作者：
Sawai, Shota [1 ]
Hosaka, Aruto [1 ]
Kawauchi, Hikaru [1 ]
Hirosawa, Kenichi [2 ]
Kannari, Fumihiko [1 ,2 ]
机构：
[1] Keio Univ, Dept Elect & Elect Engn, Yokohama, Kanagawa 2238522, Japan
[2] Keio Univ, Keio Adv Res Ctr, Yokohama, Kanagawa 2238522, Japan
来源：
APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 02期
关键词：
TI/SAPPHIRE LASER;
D O I：
10.7567/APEX.7.022702
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a Ti:sapphire laser pumped directly with a green diode laser. A single 1 W InGaN diode laser operating at 518 nm is used as the pump source. Pulse durations as short as 62 fs and average output powers of up to 23.5 mW are obtained with chirped-mirror-based dispersion compensation and a semiconductor saturable absorber mirror (SESAM). (C) 2014 The Japan Society of Applied Physics
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页数：3
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