Effects of O2/Ar Ratio and Growth Temperature on Resistive Switching Characteristics of Al/HfOx/ITO Memory Devices

被引：1
|
作者：
Dong, Jing [1 ]
Huang, Shi-Hua [1 ]
机构：
[1] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Zhejiang, Peoples R China
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2014年 / 13卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Hafnium oxide; resistive random access memory (ReRAM); temperature dependence of the off-state and the on-state; THIN-FILMS;
D O I：
10.1109/TNANO.2014.2313598
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
O-2/Ar ratio and growth temperature during the deposition process of HfOx thin film have the significant effect on the OFF-state current of Al/HfOx/ITO devices. In order to enhance the quality of HfOx layer, HfOx thin film was sputtered at 300-700 K in a mixed ambient of Ar and oxygen. For HfOx thin films deposited at 500 K with O-2/Ar ratio of 0.2, the resistive switching ratio is enhanced by five orders of magnitude. The resistive switching I-V characteristics at 120-300 K were investigated. Using temperature-dependent transport in HfOx thin film, two transport mechanisms cocontribute to the high resistance state current: the correlated barrier hopping conduction and the weak metallic filamentary conduction.
引用
收藏
页码：594 / 599
页数：6
相关论文
共 50 条
  • [1] Effects of Film Thickness and Ar/O2 Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories
    Guo Ting-Ting
    Tan Ting-Ting
    Liu Zheng-Tang
    [J]. CHINESE PHYSICS LETTERS, 2015, 32 (01)
  • [2] Effects of Film Thickness and Ar/O2 Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories
    郭婷婷
    谭婷婷
    刘正堂
    [J]. Chinese Physics Letters, 2015, (01) : 129 - 132
  • [3] Bipolar Resistive Switching Characteristics of TiN/HfOx/ITO Devices for Resistive Random Access Memory Applications
    Tan Ting-Ting
    Chen Xi
    Guo Ting-Ting
    Liu Zheng-Tang
    [J]. CHINESE PHYSICS LETTERS, 2013, 30 (10)
  • [4] Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric
    Mahapatra, R.
    Maji, S.
    Horsfall, A. B.
    Wright, N. G.
    [J]. MICROELECTRONIC ENGINEERING, 2015, 138 : 118 - 121
  • [5] Effect of Pd Nanocrystals on Resistive Switching Characteristics in HfOx Memory Devices
    Kang, Tsung-Kuei
    Wang, Chih-Kai
    Yang, Ysung-Yu
    [J]. ADVANCES IN APPLIED MATERIALS AND ELECTRONICS ENGINEERING II, 2013, 684 : 3 - 6
  • [6] Resistive Switching Characteristics in HfOx Memory Devices Embedded with Pd Nanocrystals
    Kang, Tsung-Kuei
    Tsao, Chi-Chih
    Chen, Wei-Len
    [J]. 2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2014,
  • [7] Resistive Switching Characteristics in HfOx Memory Devices with Local Electrical Field Design
    Kang, Tsung-Kuei
    Chen, Wei-Len
    Chen, Yu-Han
    Tsai, Pei-Hsun
    [J]. 2015 SILICON NANOELECTRONICS WORKSHOP (SNW), 2015,
  • [8] Effects of post-metal annealing on the electrical characteristics of HfOx-based resistive switching memory devices
    Chuang, Kai-Chi
    Lin, Kuan-Yu
    Luo, Jun-Dao
    Li, Wei-Shuo
    Li, Yi-Shao
    Chu, Chi-Yan
    Cheng, Huang-Chung
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (06)
  • [9] Reservoir Computing for Temporal Data Processing Using Resistive Switching Memory Devices Based on ITO Treated With O2 Plasma
    Lee, Jung-Kyu
    Kwon, Osung
    Jeon, Beomki
    Kim, Sungjun
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (11) : 5651 - 5656
  • [10] Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films
    Jung, Yong Chan
    Seong, Sejong
    Lee, Taehoon
    Kim, Seon Yong
    Park, In-Sung
    Ahn, Jinho
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 88 : 207 - 213
12345