Resistive Switching Characteristics in HfOx Memory Devices Embedded with Pd Nanocrystals

被引：0
|
作者：
Kang, Tsung-Kuei [1 ]
Tsao, Chi-Chih [1 ]
Chen, Wei-Len [1 ]
机构：
[1] Feng Chia Univ, Dept Elect Engn, Taichung, Taiwan
来源：
2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2014年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical characteristics of the resistive switching memory with Pd nanocrystals (NCs) are investigated. The memories with Pd NCs embedded in different places of HfOx film are fabricated. Compared with all structures, the devices with Pd NCs embedded in the middle of HfOx film show best electrical characteristics. It is found that the electrical characteristics are closely related to the forming process, including set voltage and conductive current.
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