Electrochemical growth and characterization of Cu2O thin films

被引：1

作者：

Kumar, J. Naveen ^{[1
]}

Thanikaikarasan, S. ^{[2
]}

Marjorie, S. Roji ^{[1
]}

机构：

[1] Saveetha Univ, Saveetha Sch Engn, Dept Elect & Commun Engn, Chennai 602105, Tamil Nadu, India

[2] Saveetha Univ, Saveetha Sch Engn, Dept Sci & Humanities, Div Phys, Chennai 602105, Tamil Nadu, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2020年 / 33卷

关键词：

Band gap; Electrodeposition; Cu2O; Stoichiometry; X-ray diffraction;

D O I：

10.1016/j.matpr.2020.05.226

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In industries Metal Oxides received attention owing to its salient features such as physical, chemical and optical properties. This work focused thickness, film composition, structural and optical properties of Copper Oxide thin films. A low cost, economically friendly electrodeposition technique has been employed to prepare Copper Oxide thin films on Indium doped Tin Oxide conducting glass substrates. Structural features shown that the deposited films have polycrystalline nature with cubic structure. Weight difference method has been used to find out the range of thickness of the deposited films. Energy dispersive X-ray analysis has been carried to determine the film stoichiometry of the deposited films.. Optical properties showed that the deposited films have band gap value around 2.42 eV. (C) 2019 Elsevier Ltd. All rights reserved.

引用

页码：3402 / 3404

页数：3

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