A Methodology for Short Term and Long Term NBTI Prediction Under Any Bias Conditions

被引：0

作者：

Zhang, Hanyu ^{[1
]}

Ma, Chenyue ^{[1
]}

Wu, Xuezhong ^{[1
]}

Lin, Xinnan ^{[1
]}

机构：

[1] PKUSZ, ECE, Shenzhen Key Lab Adv Electron Device & Integrat, Shenzhen 518055, Peoples R China

来源：

2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2017年

基金：

中国博士后科学基金;

关键词：

P-MOSFETS; STRESS; DEGRADATION; MODEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

a SPICE-level aging simulation methodology is developed to predict the NBTI degradation in short term and long term region. This methodology enables 10 years NBTI aging prediction under any bias conditions (including stress and recovery) by completing the time-tracing and extrapolation procedures in a single step. The proposed methodology significantly improves the speed of the long term simulation without scarifying calculation accuracy.

引用

页数：4

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