Monolithic active pixel detector in SOI technology preliminary results

被引：0

作者：

Niemiec, H ^{[1
]}

Domanski, K ^{[1
]}

Grabiec, P ^{[1
]}

Grodner, M ^{[1
]}

Jaroszewicz, B ^{[1
]}

Klatka, T ^{[1
]}

Kociubinski, A ^{[1
]}

Koziel, M ^{[1
]}

Kucewicz, W ^{[1
]}

Kucharski, K ^{[1
]}

Kuta, S ^{[1
]}

Jasielski, J ^{[1
]}

Marczewski, J ^{[1
]}

Sapor, M ^{[1
]}

Szelezniak, M ^{[1
]}

Tomaszewski, D ^{[1
]}

机构：

[1] Stanislaw Staszic Univ Min & Met, AGH, Inst Elect, PL-30059 Krakow, Poland

来源：

2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon detectors, and especially silicon pixel detectors, have found wide range of applications, not only in particle physics but also in medicine, space science and many other disciplines. Their attractive features, like good spatial and energy resolution, are motivation for the continuous works on new structural solutions and fabrication processes of these devices. In this paper the realization of a novel silicon active pixel detector, which exploits Silicon on Insulator (SOI) substrate for the integration of the detector and readout electronics, is presented. The sensor structure and the readout configuration have been developed and the measurements of a dedicated test structure have validated the new technology of the SOI detector. Preliminary tests with an infrared laser light and radioactive source confirmed also the detector sensitivity to the ionizing radiation.

引用

页码：209 / 212

页数：4

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