Effects of Sb-doping on the electron-phonon transport properties of Bi2O2Se

被引：17
|
作者：
Yang, Nannan [1 ]
Pan, Lin [1 ,2 ]
Chen, Changchun [1 ]
Wang, Yifeng [1 ,2 ]
机构：
[1] Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 210009, Peoples R China
[2] Nanjing Tech Univ, Jiangsu Collaborat Innovat Ctr Adv Inorgan Funct, Nanjing 210009, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2021年 / 858卷
基金：
中国国家自然科学基金;
关键词：
Thermoelectric; Bi2O2Se; Sb-doping; Shear exfoliation;
D O I：
10.1016/j.jallcom.2020.157748
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, Sb-doping with the procedure of shear exfoliation was adopted in order to improve the thermoelectric performance of Bi2O2Se. It is found that Sb-doping could further increase the electron concentration and mobility, leading to a high electrical conductivity. (e.g., 517 S cm(-1) of Bi1.96Sb0.04O2Se at room temperature) Besides, thermal conductivity had been inhibited to 0.6 Wm(-1) K-1 at 770 K for the sample Bi1.99Sb0.01O2Se. Finally, a peak ZT of around 0.59 at 773 K was achieved for the sample Bi1.98Sb0.02O2Se, which is about 1.8 times larger than that of un-doped one. The results indicate that Sb-doping with the procedure of shear exfoliation could optimize the thermoelectric performance of Bi2O2 Se noticeably. (C) 2020 Elsevier B.V. All rights reserved.
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页数：7
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