Effects of Sb-doping on the electron-phonon transport properties of Bi2O2Se

In this study, Sb-doping with the procedure of shear exfoliation was adopted in order to improve the thermoelectric performance of Bi2O2Se. It is found that Sb-doping could further increase the electron concentration and mobility, leading to a high electrical conductivity. (e.g., 517 S cm(-1) of Bi1.96Sb0.04O2Se at room temperature) Besides, thermal conductivity had been inhibited to 0.6 Wm(-1) K-1 at 770 K for the sample Bi1.99Sb0.01O2Se. Finally, a peak ZT of around 0.59 at 773 K was achieved for the sample Bi1.98Sb0.02O2Se, which is about 1.8 times larger than that of un-doped one. The results indicate that Sb-doping with the procedure of shear exfoliation could optimize the thermoelectric performance of Bi2O2 Se noticeably. (C) 2020 Elsevier B.V. All rights reserved.