Resistive switching characteristics of Pt/CeOx/TiN memory device

被引：16
|
作者：
Ismail, Muhammad [1 ,2 ,4 ]
Talib, Ijaz [4 ]
Huang, Chun-Yang [1 ,2 ]
Hung, Chung-Jung [3 ]
Tsai, Tsung-Ling [1 ,2 ]
Jieng, Jheng-Hong [1 ,2 ]
Chand, Umesh [1 ,2 ]
Lin, Chun-An [1 ,2 ]
Ahmed, Ejaz [4 ]
Rana, Anwar Manzoor [4 ]
Nadeem, Muhammad Younus [4 ]
Tseng, Tseung-Yuen [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[4] Bahauddin Zakariya Univ, Dept Phys, Multan 60800, Pakistan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 06期
关键词：
ROOM-TEMPERATURE FERROMAGNETISM; CERIUM OXIDE; FILMS; XPS;
D O I：
10.7567/JJAP.53.060303
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The resistive switching characteristics of Pt/CeOx/TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory (RRAM). The X-ray diffraction characteristics of the sputtered CeOx layer indicate the formation of nanocrystalline single-phase CeO2 with a cubic fluorite structure. The existence of oxygen vacancies in the Pt/CeOx/TiN memory device was determined by X-ray photoelectron spectroscopic studies, while the presence of an interfacial layer between CeOx and the TiN bottom electrode was investigated by Xray diffraction and high resolution transmission electron microscopy. The TiON layer formed at the TiN/CeOx interface seems to play a key role in the resistive switching mechanism of the device. The present CeOx-based device shows excellent bipolar resistive switching characteristics, including a low operation current (100 mu A), high ON/OFF resistance ratio (similar to 10(5)), and good retention/stress characteristics at both room temperature and 85 degrees C. (C) 2014 The Japan Society of Applied Physics
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页数：4
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