Study of the Resistive Switching Characteristics and Mechanisms of Pt/CeOx/TiN Structure for RRAM Applications

被引：7
|
作者：
Zhou, Qigang [1 ]
Zhai, Jiwei [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2012年 / 140卷
关键词：
CeOx film; Resistive switching characteristic; Switching mechanism; CEO2; XPS;
D O I：
10.1080/10584587.2012.741372
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pt (top)/CeOx/TiN (bottom) sandwich structures with nonstoichiometric CeOx (1.3 < x < 2) films were fabricated by radio-frequency magnetron sputtering system. Their reproducible resistive switching characteristics were study systematically for resistive random access memory (RRAM) applications. The X-ray photoelectron spectroscopy was performed to analyze the mechanisms of resistive switching (RS) of CeOx-based films. The results show that both the oxygen vacancies in the CeOx film and the interfacial TiON layer formed between the dielectric CeOx film and the TiN bottom electrode play important roles in the observed RS behaviors.
引用
收藏
页码：16 / 22
页数：7
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