Design Considerations for 60 GHz CMOS Power Amplifiers

被引:0
|
作者
He, Ying [1 ]
Zhao, Dixian [1 ]
Li, Lianming [1 ]
Reynaert, Patrick [1 ]
机构
[1] Katholieke Univ Leuven, ESAT MICAS, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium
关键词
millimeter wave (mm-wave); CMOS; power amplifier; power combining; 60; GHz;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes design considerations for millimeter-wave CMOS power amplifiers (PA). Solutions are presented from device level to circuit level and demonstrated by a measured 60 GHz PA prototype in 65 nm bulk CMOS technology. The proposed PA achieves a peak output power of 14 dBm with a peak power-added efficiency (PAE) of 7.2%. The small signal gain is 10.2 dB and 1-dB compression output power is 10.8 dBm. The transformer-based passives employed in the design enable a compact layout with an active area of 0.3 mm(2). The PA consumes a quiescent current of 143 mA from a 1.6 V supply voltage.
引用
收藏
页码:1613 / 1616
页数:4
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