Crystalline silicon surface passivation by thermal ALD deposited Al doped ZnO thin films

被引：18

作者：

Panigrahi, Jagannath ^{[1
,2
]}

Vandana ^{[1
,2
]}

Singh, Rajbir ^{[1
,2
]}

Rauthan, C. M. S. ^{[1
,2
]}

Singh, P. K. ^{[1
,2
]}

机构：

[1] Acad Sci & Innovat Res AcSIR, CSIR, Natl Phys Lab Campus, New Delhi 110012, India

[2] Network Inst Solar Energy, CSIR Natl Phys Lab, Adv Mat & Devices Div, Inorgan Photovolta Devices Grp, New Delhi 110012, India

来源：

AIP ADVANCES | 2017年 / 7卷 / 03期

关键词：

SOLAR-CELLS; RECOMBINATION; EFFICIENCY;

D O I：

10.1063/1.4979326

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The evidence of good quality silicon surface passivation using thermal ALD deposited Al doped zinc oxide (AZO) thin films is demonstrated. AZO films are prepared by introducing aluminium precursor in between zinc and oxygen precursors during the deposition. The formation of AZO is confirmed by ellip-sometry, XRD and Hall measurements. Effective minority carrier lifetime (tau(eff)) greater than 1.5ms at intermediate bulk injection levels is realized for symmetrically passivated p-type silicon surfaces under optimised annealing conditions of temperature and time in hydrogen ambient. The best results are realised at 450 degrees C annealing for > 15min. Such a layer may lead to implied open circuit voltage gain of 80mV. (C) 2017 Author(s).

引用

页数：6

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