Effects of Cr dopant on the microstructure and electromigration performance of Cu interconnects

被引:12
|
作者
Wang, Xinjian [1 ]
Dong, Xianping [1 ]
Wu, Jiansheng [1 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
关键词
Cu(Cr) alloy films; Surface morphology; Columnar grain; Electromigration; LARGE-SCALE-INTEGRATION; THIN-FILMS; COPPER INTERCONNECTS; SURFACE-MORPHOLOGY; DIFFUSION BARRIER; RESISTIVITY; METALLIZATION; AGGREGATION; RELIABILITY; DEPOSITION;
D O I
10.1016/j.apsusc.2009.07.022
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cu and Cu(Cr) alloy films were deposited on SiO(2) substrates by magnetron sputtering. The microstructure and electromigration performance of films were investigated. A small amount of Cr refines the Cu grains and improves the surface morphology of Cu films. After annealing at 450 degrees C, in contrast to the Cu film with large lateral grown grains, the Cu(Cr) alloy film exhibits. ne columnar grains with a < 111 > preferred orientation. Most of Cr in the annealed Cu(Cr) film has segregated at the film surface and the film/substrate interface. The grain boundary grooving at the film/substrate interface is completely prohibited for Cu(Cr) films. As a result, the electromigration lifetimes of annealed Cu(Cr) lines are 10-100 times longer than those of annealed Cu lines. The final resistivity of the annealed Cu(Cr) film is 2.55 mu Omega cm which is close to that of the annealed Cu film. With the improved surface morphology and high electromigration resistance, the dilute Cu(Cr) alloy film can be a viable interconnect material or a seed layer in the Cu-damascene technology. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:9273 / 9278
页数:6
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