Effects of Cr dopant on microstructure and properties of Cu films on Si(100)

被引：0
|
作者：
Wang Xin-jian [1 ]
Dong Xian-ping [1 ]
Liu Jia-cong [1 ]
Jiang Chuan-hai [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Key Lab Minist Educ High Temp Mat & Testing, Shanghai 200240, Peoples R China
来源：
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA | 2007年 / 17卷
关键词：
cu(Cr) films; annealing; texture; thermal stability; segregation;
D O I：
暂无
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
The thin films of pure Cu and Cu-2.18%Cr (mole fraction, %) were deposited on Si(100) substrates. Then the samples were vacuum-annealed at 573-773 K to investigate the effect of Cr on the microstructural and electrical characteristics of Cu/Si systems. The XRD results reveal that the annealed Cu(Cr) film has a strong (I 11) texture. The results of AFM and FESEM indicate that the Cu(Cr) films with insoluble Cr have compact surface morphology and fine columnar microstructure. Upon annealing, most Cr segregates at the surface and interface. The residual insoluble Cr is enriched in amorphous structure between Cu grains and retards the crystallization of annealed Cu(Cr) films. As a result, the minimal annealing resistivity of the Cu-2.18%Cr film is 2.76 mu ohm(center dot)cm at 773 K, which approaches to 2.55 mu ohm(center dot)cm of the Cu film at 673 K. Significant changes in the microstructure and properties are obtained by adding Cr to Cu films after annealing.
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收藏
页码：S730 / S735
页数：6
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