Mid-Infrared silicon pillar waveguides

被引：0

作者：

Singh, Neetesh ^{[1
]}

Hudson, Darren D. ^{[1
]}

Eggleton, Benjamin J. ^{[1
]}

机构：

[1] Univ Sydney, Sch Phys, IPOS, Ctr Ultrahigh Bandwidth Devices Opt Syst CUDOS, Sydney, NSW 2006, Australia

来源：

MICRO+NANO MATERIALS, DEVICES, AND SYSTEMS | 2015年 / 9668卷

关键词：

Silicon; Silicon on sapphire; Mid-IR; Nonlinear photonics; Supercontinuum generation; SUPERCONTINUUM GENERATION; DISPERSION; ABSORPTION; REFRACTION;

D O I：

10.1117/12.2202397

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work silicon pillar waveguides have been proposed to exploit the entire transparent window of silicon. These geometries posses a broad and flat dispersion (from 2 to 6 mu m) with four zero dispersion wavelengths. We calculate supercontinuum generation spanning over two octaves (2 to >8 mu m) with long wavelengths interacting weakly with the lossy substrate. These structures have higher mode confinement in the silicon- away from the substrate, which makes them substrate independent and are promising for exploring new nonlinear phenomena and highly sensitive molecular sensing over the entire silicon's transparency range

引用

页数：10

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