Low loss silicon waveguides for the mid-infrared

被引：191

作者：

Mashanovich, Goran Z. ^{[1
]}

Milosevic, Milan M. ^{[1
]}

Nedeljkovic, Milos ^{[1
]}

Owens, Nathan ^{[1
]}

Xiong, Boqian ^{[2
]}

Teo, Ee Jin ^{[2
]}

Hu, Youfang ^{[1
]}

机构：

[1] Univ Surrey, Fac Engn & Phys Sci, Adv Technol Inst, Surrey GU2 7XH, England

[2] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

FABRICATION;

D O I：

10.1364/OE.19.007112

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Silicon-on-insulator (SOI) has been used as a platform for near-infrared photonic devices for more than twenty years. Longer wavelengths, however, may be problematic for SOI due to higher absorption loss in silicon dioxide. In this paper we report propagation loss measurements for the longest wavelength used so far on SOI platform. We show that propagation losses of 0.6-0.7 dB/cm can be achieved at a wavelength of 3.39 mu m. We also report propagation loss measurements for silicon on porous silicon (SiPSi) waveguides at the same wavelength. (C) 2011 Optical Society of America

引用

页码：7112 / 7119

页数：8

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