All-polymer field effect transistors

被引：0

作者：

Schrödner, M ^{[1
]}

Sensfuss, S ^{[1
]}

Roth, HK ^{[1
]}

Stohn, RI ^{[1
]}

Clemens, W ^{[1
]}

Bernds, A ^{[1
]}

机构：

[1] Thuering Inst Text & Kunststoff Forsch EV, D-07407 Rudolstadt, Germany

来源：

POLYTRONIC 2002: 2ND INTERNATIONAL IEEE CONFERENCE ON POLYMERS AND ADHESIVES IN MICROELECTRONICS AND PHOTONICS, CONFERENCE PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polymer field effect transistors (PFETs) were made from polymeric semiconductors, insulators and electrodes on flexible polymeric substrates. The authors present recent results of all-polymer FETs with conjugated polymers like poly(3-alkylthiophenes) as active semiconducting material. Highly resolved electrodes were patterned by lithography of conducting polymers. The on/off ratios exceed 1000 by far. The logic capability of the PFETs could be demonstrated by the realisation of inverters.

引用

页码：188 / 190

页数：3

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