Current status and future directions of SOI technology

被引：12

作者：

Yoshimi, M ^{[1
]}

机构：

[1] Toshiba Co Ltd, Syst LSI Div, Syst LSI Res & Dev Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 07期

关键词：

D O I：

10.1016/S0038-1101(02)00030-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current status and future directions of SOI technology are reviewed, by discussing advantages and issues to be solved for MPU, RF, and other low-power applications. The possibility of future MOSFET scaling is also discussed for novel SOI device structures based on modified scaling scenarios. It is recognized that the progress of SOI technology is adding CMOS technology unique flexibility and possibilities, which are both expected to provide useful countermeasures for circumventing the present scaling crisis. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：951 / 958

页数：8

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