GaN High-Efficiency S-band Power Amplifier with Power Flexibility from 1 to 10 Watts

被引：0
|
作者：
Dellier, S. [1 ]
Dehaene, T. [2 ]
Peragin, E. [3 ]
机构：
[1] AMCAD Engn, F-87068 Limoges, France
[2] Syrlinks, F-35170 Bruz, France
[3] Ctr Natl dEtudes Spati, F-31400 Toulouse, France
来源：
2014 IEEE TOPICAL CONFERENCE ON POWER AMPLIFIERS FOR WIRELESS AND RADIO APPLICATIONS (PAWR) | 2014年
关键词：
power amplifier; high-efficiency; flexibility; GaN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the development of a high-efficiency S-band power amplifier (PA) with power flexibility, based on packaged GaN devices. This amplifier aims to demonstrate the highest power added efficiency (PAE) for a flexible output power from 1 W to 10 W. The approach consists in selecting the suited components of the shelf (COTS), and then in performing comprehensive power characterizations of these devices. The modeling process used enables to design the two stages amplifier with very good predictions of the manufactured PA. The obtained results with an efficiency above 60% for the full range of adjustable RF power between 1 and 10W, are very promising for use in future space applications.
引用
收藏
页码：28 / 30
页数：3
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