A miniaturized GaAs power amplifier for 1.5 GHz digital cellular phones

被引：4
|
作者：
Makioka, S [1 ]
Enomoto, S [1 ]
Furukawa, H [1 ]
Tateoka, K [1 ]
Yoshikawa, N [1 ]
Kanazawa, K [1 ]
机构：
[1] MATSUSHITA ELECT IND CO LTD,ELECT RES LAB,TAKATSUKI,OSAKA,JAPAN
来源：
MONOLITHIC CIRCUITS SYMPOSIUM, DIGEST OF PAPERS | 1996年
关键词：
D O I：
10.1109/MCS.1996.506293
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：13 / 16
页数：4
相关论文
共 50 条
  • [21] Advances in GaAs HBT power amplifiers for cellular phones and military applications
    Ali, F
    Gupta, A
    Higgins, A
    MONOLITHIC CIRCUITS SYMPOSIUM, DIGEST OF PAPERS, 1996, : 61 - 66
  • [22] Double-doped power HJFETs for digital cellular phones
    Iwata, N
    Yamaguchi, K
    Kuzuhara, M
    NEC RESEARCH & DEVELOPMENT, 1996, 37 (04): : 441 - 447
  • [23] How to design low-power digital cellular phones
    Mashiko, K
    1996 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN - DIGEST OF TECHNICAL PAPERS, 1996, : 177 - 180
  • [24] A Systematic Design of 1.5-9 GHz High Power-High Efficiency Two-Stage GaAs PHEMT Power Amplifier
    Sayginer, Mustafa
    Yazgi, Metin
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2014, 24 (05) : 615 - 622
  • [25] ANALYSIS OF PHASE CHARACTERISTICS OF A GAAS-FET POWER-AMPLIFIER FOR DIGITAL CELLULAR PORTABLE TELEPHONES
    ISHIZAKI, T
    IKEDA, H
    YOSHIKAWA, Y
    UWANO, T
    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1994, 77 (04): : 1 - 9
  • [26] 0.2 cc HBT power amplifier module with 40 % power-added efficiency for 1.95 GHz Wide-band CDMA cellular phones
    Miyazawa, N
    Itoh, H
    Nakasha, Y
    Iwai, T
    Miyashita, T
    Ohara, S
    Joshin, K
    1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 1999, : 1099 - 1102
  • [27] A GAAS MCM POWER-AMPLIFIER OF 3.6 V OPERATION WITH HIGH-EFFICIENCY OF 49-PERCENT FOR 0.9 GHZ DIGITAL CELLULAR PHONE SYSTEMS
    TATEOKA, K
    SUGIMURA, A
    FURUKAWA, H
    YOSHIKAWA, N
    KANAZAWA, K
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (11) : 2539 - 2542
  • [28] HIGH-EFFICIENCY LOW ADJACENT CHANNEL LEAKAGE GAAS POWER MMIC FOR 1.9-GHZ DIGITAL CORDLESS PHONES
    YOKOYAMA, T
    KUNIHISA, T
    FUJIMOTO, H
    TAKEHARA, H
    ISHIDA, K
    IKEDA, H
    ISHIKAWA, O
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1994, 42 (12) : 2623 - 2628
  • [29] A 3.5 GHz Packaged Medium Power Amplifier using GaAs PHEMT
    Rasmi, Amiza
    Azmi, I. M.
    Rose, M. Rafie Che
    Marzuki, Arjuna
    2011 IEEE REGION 10 CONFERENCE TENCON 2011, 2011, : 622 - 625
  • [30] Design of 2.4 GHz GaAs HBT high linearity power amplifier
    Zhang S.
    Fu H.
    Zhejiang Daxue Xuebao (Gongxue Ban)/Journal of Zhejiang University (Engineering Science), 2024, 58 (07): : 1524 - 1532
12345