The upper limits of useful n- and p-type doping in GaAs and AlAs

被引：12
|
作者：
Newman, RC [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 66卷 / 1-3期
基金：
英国工程与自然科学研究理事会;
关键词：
GaAs; Si dopant; C dopant; AlAs;
D O I：
10.1016/S0921-5107(99)00117-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The maximum carrier concentration found for GaAs:Si is n(max) similar to 2 x 10(19) cm(-3), limited by the amphoteric behaviour of the Si impurities, the generation of gallium vacancies and Si precipitation. After annealing, a more typical concentration is 4 -5 x 10(18) cm(-3). GaAs:C doped to a level greater than p(max) similar to 10(19) cm(-3) is unstable during post-growth heat treatments, with the formation of C-C dimers that are deep donors. This process also occurs in. AIAs, but p(max) has not been determined. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：39 / 45
页数：7
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