Structure and electrical properties of MnO doped (Ba0.96Ca0.04)(Ti0.92Sn0.08)O3 lead free ceramics

被引:3
|
作者
Wu, Bo [1 ]
Ma, Jian [2 ]
Wu, Wenjuan [1 ]
Chen, Min [1 ]
机构
[1] Chengdu Univ Informat Technol, Sichuan Prov Key Lab Informat Mat & Devices Appli, Chengdu 610225, Peoples R China
[2] Southwest Univ Nationalities, Dept Phys, Chengdu 610041, Peoples R China
关键词
ENHANCED PIEZOELECTRIC PROPERTIES; DIFFUSE PHASE-TRANSITION; SINTERING TEMPERATURE; MICROSTRUCTURE; CUO; COEFFICIENT; D(33);
D O I
10.1007/s10854-016-5804-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, (Ba0.96Ca0.04)(Ti0.92Sn0.08)O-3-xmol MnO (BCTS-xMn) lead-free piezoelectric ceramics were fabricated by the conventional solid-state technique. The composition dependence (0 <= x <= 3.0 %) of the microstructure, phase structure, and electrical properties was systematically investigated. An O-T phase structure was obtained in all ceramics, and the sintering behavior of the BCTS ceramics was gradually improved by doping MnO content. In addition, the relationship between poling temperature and piezoelectric activity was discussed. The ceramics with x = 1.5 % sintering at temperature of 1330 A degrees C demonstrated an optimum electrical behavior: d (33) similar to 475 pC/N, k (p) similar to 50 %, epsilon (r) similar to 4060, tan delta similar to 0.4 %, P (r) similar to 10.3 mu C/cm(2), E (c) similar to 1.35 kV/mm, T (C) similar to 82 A degrees C, strain similar to 0.114 % and similar to 525 pm/V. As a result, we achieved a preferable electric performance in BaTiO3-based ceramics with lower sintering temperature, suggesting that the BCTS-xMn material system is a promising candidate for lead-free piezoelectric ceramics.
引用
收藏
页码:2358 / 2365
页数:8
相关论文
共 50 条
  • [41] Effect of TiO2 doped Ni electrodes on the dielectric properties and microstructures of (Ba0.96Ca0.04)(Ti0.85Zr0.15)O3 multilayer ceramic capacitors
    Chiang, Chen-Su
    Lee, Ying-Cliieh
    Shiao, Fu-Thang
    Lee, Wen-Hsi
    Hennings, Detlev
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2012, 32 (04) : 865 - 873
  • [42] Frequency and temperature dependent dielectric properties in the lead free Ba0.75Ce0.033Sr0.2Ti0.96Sn0.04O3 ceramics
    I. Zeydi
    A. Zaidi
    M. A. J.Dhahri
    M. Zaidi
    Applied Physics A, 2019, 125
  • [43] Frequency and temperature dependent dielectric properties in the lead free Ba0.75Ce0.033Sr0.2Ti0.96Sn0.04O3 ceramics
    Zeydi, I
    Zaidi, A.
    Dhahri, J.
    Zaidi, M. A.
    Elhabradi, M.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2019, 125 (09):
  • [44] Effect of Nb2O5 Addition on the Physical and Electrical Properties of Lead-Free (Na0.5Bi0.5)TiO3-Ba(Sn0.08Ti0.92)O3 Ceramics
    Wang, Chun-Huy
    BIOTECHNOLOGY, CHEMICAL AND MATERIALS ENGINEERING, PTS 1-3, 2012, 393-395 : 72 - 75
  • [45] Effects of electrical and mechanical properties of Ba0.92Ca0.08Zr0.05Ti0.95O3 ceramics with lanthanum dopants
    Tian, Yongshang
    Ma, Mingyang
    Ma, Xin
    Liu, Jiayue
    Hu, Xiongjie
    Wang, Jinshuang
    Jing, Qiangshan
    MATERIALS CHEMISTRY AND PHYSICS, 2024, 328
  • [46] Structure and electrical properties of lead-free (Bi0.5Na0.5)TiO3-Ba(Sn,Ti)O3 ceramics
    Wang, Chun-Huy
    MANUFACTURING PROCESSES AND SYSTEMS, PTS 1-2, 2011, 148-149 : 232 - 235
  • [47] Structural and Dielectric Properties of Y2O3-Doped Ba0.92Sr0.08Ti0.95Sn0.05O3 Ceramics
    王晓凤
    曲远方
    李远亮
    Transactions of Tianjin University, 2009, 15 (06) : 428 - 433
  • [48] Dielectric Properties of Oxide-Doped in Ba(Ti, Sn)O3 Ceramics
    李伟东
    包曼玲
    诸培南
    华东理工大学学报(自然科学版), 1993, (01) : 78 - 84
  • [49] Enhanced temperature stability and quality factor with Hf substitution for Sn and MnO2 doping of (Ba0.97Ca0.03)(Ti0.96Sn0.04)O3 lead-free piezoelectric ceramics with high Curie temperature
    Tsai, Cheng-Che
    Chao, Wei-Hsiang
    Chu, Sheng-Yuan
    Hong, Cheng-Shong
    Weng, Chung-Ming
    Su, Hsiu-Hsien
    AIP ADVANCES, 2016, 6 (12):
  • [50] Diffuse Phase Transition of Ba0.92Ca0.08(Ti0.82Zr0.18)O3 Based Ceramics
    Xu Qin
    Ding Shihua
    Song Tianxiu
    Wang Hongni
    FERROELECTRICS, 2012, 426 : 282 - 289