Compact Cu2ZnSn(S,Se)4 Thin Films Fabricated by a Simple Sol-Gel Technique

被引：2

作者：

Zhang Ke-Zhi ^{[1
]}

Tao Jia-Hua ^{[1
]}

Liu Jun-Feng ^{[1
]}

He Jun ^{[1
]}

Dong Yu-Chen ^{[1
]}

Sun Lin ^{[1
]}

Yang Ping-Xiong ^{[1
]}

Chu Jun-Hao ^{[1
]}

机构：

[1] E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2014年 / 29卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Sol-Gel; CZTSSe; thin film; selenization; GROWTH; CELLS;

D O I：

10.3724/SP.J.1077.2014.14065

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cu2ZnSn(S1-xSex)(4) (CZTSSe) thin films with a compact and crack-free morphology and large-grain are obtained via a green Sol-Gel process and post-selenization. The fabrication of CZTSSe films is simplified by predigesting preparation process of Cu2ZnSnS4 (CZTS) precusor solution and avoiding using sulfurization. Low-toxic ethylene glycol is selected as solvent, and Cu(CH3COO)(2), Zn(CH3COO)(2), SnCl(2 center dot)2H(2)O and thiourea are used as raw materials. Energy dispersive X-ray analyzer (EDX), X-ray diffraction (XRD) and Raman spectra results indicate that all of CZTSSe thin films with the kesterite structure are of Cu-poor and Zn-rich states. Optical band gap (E-opt) of the CZTSSe thin films decreases from 1.51 to 1.14 eV with increasing Se content.

引用

页码：781 / 784

页数：4

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