Preparation and characterization of Cu2ZnSn(S,Se)4 thin film as photovoltaic absorber material for solar cells

被引:10
|
作者
Wang, Chaozheng [1 ]
Zhu, Chengjun [1 ]
Zhang, Tianwei [1 ]
机构
[1] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inner Mongoli, Hohhot 010021, Peoples R China
基金
中国国家自然科学基金;
关键词
Thin films; Crystal structure; Drop-coating; CZTS nanocrystals;
D O I
10.1016/j.matlet.2013.06.091
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cu2ZnSn(S,Se)(4) (CZTSSe) thin films were successfully prepared by selenization and sulfurization of Cu2ZnSnS4 (CZTS) nanocrystals synthesized by a single-step process with a new oleamide-based solution. The structure and properties of the CZTSSe thin films were characterized. The results indicated that the CZTSSe films had formed a single-phase structure at 450 degrees C, and showed rich Cu, Sn and poor Zn compositions, and the Se element in CZTSSe increased with the increase of the annealing temperature. The films were all p-type, and that annealed at 500 degrees C owned lower resistivity. In the visible light region, the films had strong optical absorption and the observed band gaps are 1.36 eV and 1.32 eV at 450 degrees C and 500 degrees C, respectively. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:62 / 64
页数:3
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