Carbon Nanotube Field Emitters Synthesized on Metal Alloy Substrate by PECVD for Customized Compact Field Emission Devices to Be Used in X-Ray Source Applications

被引:47
|
作者
Park, Sangjun [1 ]
Gupta, Amar Prasad [1 ,2 ]
Yeo, Seung Jun [1 ,2 ]
Jung, Jaeik [2 ]
Paik, Sang Hyun [2 ,3 ]
Mativenga, Mallory [4 ]
Kim, Seung Hoon [5 ]
Shin, Ji Hoon [5 ]
Ahn, Jeung Sun [1 ]
Ryu, Jehwang [1 ,2 ]
机构
[1] Kyung Hee Univ, Dept Phys, Seoul 02453, South Korea
[2] CAT Beam Tech Co Ltd, Seoul Biohub, 117-3 Hoegi Ro, Seoul 02455, South Korea
[3] Vinmec Int Hosp, Dept Radiol, Hanoi 10000, Vietnam
[4] Kyung Hee Univ, Dept Informat Display, Seoul 02453, South Korea
[5] Univ Ulsan, Asan Med Ctr, Dept Radiol, Coll Med, Seoul 05505, South Korea
来源
NANOMATERIALS | 2018年 / 8卷 / 06期
基金
新加坡国家研究基金会;
关键词
carbon nanotubes; PECVD; metal alloy; field emission; compact field emission device; X-ray source; ZINC-OXIDE; GROWTH; ARRAYS; FILMS; RAMAN;
D O I
10.3390/nano8060378
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, a simple, efficient, and economical process is reported for the direct synthesis of carbon nanotube (CNT) field emitters on metal alloy. Given that CNT field emitters can be customized with ease for compact and cold field emission devices, they are promising replacements for thermionic emitters in widely accessible X-ray source electron guns. High performance CNT emitter samples were prepared in optimized plasma conditions through the plasma-enhanced chemical vapor deposition (PECVD) process and subsequently characterized by using a scanning electron microscope, tunneling electron microscope, and Raman spectroscopy. For the cathode current, field emission (FE) characteristics with respective turn on (1 mu A/cm(2)) and threshold (1 mA/cm(2)) field of 2.84 and 4.05 V/mu m were obtained. For a field of 5.24 V/mu m, maximum current density of 7 mA/cm(2) was achieved and a field enhancement factor beta of 2838 was calculated. In addition, the CNT emitters sustained a current density of 6.7 mA/cm(2) for 420 min under a field of 5.2 V/m, confirming good operational stability. Finally, an X-ray generated image of an integrated circuit was taken using the compact field emission device developed herein.
引用
收藏
页数:9
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