Tuning of ripple patterns and wetting dynamics of Si (100) surface using ion beam irradiation

被引：30
|
作者：
Kumar, Tanuj [1 ]
Singh, U. B. [1 ]
Kumar, Manish [2 ]
Ojha, Sunil [1 ]
Kanjilal, D. [1 ]
机构：
[1] Interuniv Accelerator Ctr, New Delhi 110067, India
[2] Cent Univ Rajasthan, Dept Phys, Kishangarh 305801, Ajmer, India
来源：
CURRENT APPLIED PHYSICS | 2014年 / 14卷 / 03期
关键词：
Ripple; AFM; RBS; SEM; Roughness; Contact angle; THIN-FILM; EVOLUTION; GAAS; DOTS;
D O I：
10.1016/j.cap.2013.12.007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ripple patterns on Si (100) surface have been fabricated using 200 keV Ar+ oblique ion beam irradiation. Dynamical evolution of patterns is studied for the fluences ranging from 3 x 10(17) ions/cm(2) to 3 x 10(18) ions/cm(2). AFM study reveals that the exponential growth of roughness with stable wavelength of ripples up to higher fluence values is lying in the linear regime of Continuum models. Stylus Profilometer measurement was carried out to emphasize the role of sputtering induced surface etching in ripple formation. Rutherford Backscattering Spectroscopy shows the incorporation of Ar in the near surface region. Observed growth of ripples is discussed in the framework of existing models of surface patterning. Role of ion beam sputtering induced surface etching is emphasized in formation of ripples. In addition, the wetting study is performed to demonstrate the possibility of engineering the hydrophilicity of ripple patterned Si (100) surface. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码：312 / 317
页数：6
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