Self-organized nanopatterning of Si (100) surface using ion beam irradiation

被引：0

作者：

Vandana ^{[1
]}

Kumar, Tanuj ^{[2
]}

Jyoti ^{[3
]}

Tomar, Amit ^{[4
]}

Sulania, Indra ^{[5
]}

Kanjilal, D. ^{[5
]}

Kumar, Shyam ^{[1
]}

机构：

[1] Kurukshetra Univ, Dept Phys, Kurukshetra 136119, Haryana, India

[2] Cent Univ Jammu, Dept Nanosci & Mat, Jammu, India

[3] Manipal Univ Jaipur, Dept Phys, Jaipur 3030074, Rajasthan, India

[4] Cent Univ Jammu, Dept Phys & Astron Sci, Jammu, India

[5] Interuniv Accelerator Ctr, Aruna Asaf Ali Marg, New Delhi 110067, India

来源：

NATIONAL CONFERENCE ON RECENT ADVANCES IN EXPERIMENTAL AND THEORETICAL PHYSICS (RAETP-2018) | 2018年 / 2006卷

关键词：

Ripples; AFM- Atomic Force Microscopy; PSD- Power Spectral Density;

D O I：

10.1063/1.5051304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanopatterning of silicon (Si) surface is carried out using 100 keV Ar+ ion beam at an angle of 60 degrees with respect to surface normal. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) demonstrates the formation of ripple patterns which are grown in dimensions with irradiation fluence from 3x10(17) ions/cm(2) and 3x10(18) ions/cm(2). Cross-sectional transmission electron microscopy shows the near surface amorphization and periodic modulations at the amorphous/crystalline (a/c) interface as well as free surface. One dimensional-Power spectral density (1D-PSD) and the roughness exponent (alpha) values show the contribution of surface diffusion perpendicular to the ripples orientation in surface patterning at higher fluences.

引用

页数：4

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