High-temperature and high-speed operation of a 1.3-μm uncooled InGaAsP-InP DFB laser

被引：16

作者：

Bang, D ^{[1
]}

Shim, J

Kang, JK

Um, M

Park, S

Lee, S

Jang, D

Eo, Y

机构：

[1] Samsung Elect Co Ltd, Div Optoelect, Suwon, Kyungki Do, South Korea

[2] Hanyang Univ, Dept Elect & Comp Engn, Ansan, Kyungki Do, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 09期

关键词：

1.3-mu m uncooled laser; detuning; Fe-doped BH; InGaAsP; loss-coupled DFB;

D O I：

10.1109/LPT.2002.801044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 1.3-mum uncooled InGaAsP-InP loss-coupled distributed feedback lasers operating over 10 Gb/s and at 85 degreesC were successfully fabricated. In order to achieve their high-speed and high-temperature operations simultaneously, the following are thoroughly investigated: modulation-doped and strain-compensated multiple-quantum-well active layers, Fe-doped buried-heterostructure, coupling coefficient of loss-coupled grating, detuning lasing wavelength from the gain peak, and facet coatings. The authors also demonstrate 10 Gb/s transmission with negligible dispersion power penalty over 20 km of nondispersion-shifted fiber at 10 Gb/s for the temperature ranging from 25 degreesC to 85 degreesC.

引用

页码：1240 / 1242

页数：3

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