Novel technique for fabrication of one- and two-dimensional systems

被引:5
|
作者
Prinz, VY
Seleznev, VA
Gutakovsky, AK
机构
[1] Institute of Semiconductor Physics, Novosibirsk 630090
基金
俄罗斯基础研究基金会;
关键词
gallium arsenide; semiconductor-semiconductor heterostructures; tunneling;
D O I
10.1016/0039-6028(96)00557-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A new technique for fabrication of nano- and atomic-scale device elements and quantum systems which cannot be obtained by any other technology is proposed. The technique is based on the experimentally established possibility of creating atomically sharp-edged cracks of desired length and direction in a given layer of a heterostructure. Ultra-narrow (1 nm) and perfectly straight window-slits in the GaAs layer-mask of semiconductor structures and ultra-thin (2 nm) semiconductor membranes have been fabricated for the first time.
引用
收藏
页码:886 / 889
页数:4
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