Radiation-induced charge trapping and recombination process in natural topaz studied by TL, EPR and XRD

被引：6

作者：

Souza, DN

de Lima, JF

Valerio, MEG ^{[1
]}

Sasaki, JM

Caldas, LVE

机构：

[1] Univ Fed Sergipe, Dept Fis, CCET, BR-49100000 Aracaju, SE, Brazil

[2] Univ Fed Sergipe, Dept Educ, CECH, BR-49100000 Aracaju, SE, Brazil

[3] Univ Fed Ceara, Dept Fis, BR-60455970 Fortaleza, Ceara, Brazil

[4] IPEN CNEN SP, BR-05508000 Sao Paulo, Brazil

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 218卷

关键词：

topaz; TL; powder X-ray diffraction; EPR;

D O I：

10.1016/j.nimb.2003.12.050

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Thermoluminescence (TL) was combined with X-ray diffractometry and electron paramagnetic resonance (EPR) to identify charge traps and recombination centres in natural topaz and to help the understanding of the process of light emission in this solid. According to the results, colourless samples presented higher TL intensities than coloured samples, and they also exhibited the highest [OH]/[F] occupation factors. The thermal treatments were found to change the [OH]/[F] ratios since samples treated at about 400 degreesC present higher TL response and occupation factors. These results indicate that the OH(-) group is directly connected to the trapping centres in topaz. The EPR signal with g approximate to 2.02, due to (AlO(4))(0) centres, increases with the dose. From the TL and the EPR results, it was possible to confirm that the (AlO(4))(0) centre is the luminescent centre in topaz. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：123 / 127

页数：5

共 36 条

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[24] Charge Recombination in P3HT/PC70BM Composite Studied by Light-Induced EPR
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Uvarov, Mikhail N.
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[25] Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO2
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[26] Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO2
Paillet, P
Touron, JL
Leray, JL
Cirba, C
Michez, A
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[27] Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO2
Paillet, P
Touron, JL
Leray, JL
Cirba, C
Michez, A
RADECS 97: FOURTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1998, : 50 - 55
[28] EFFECT OF POST-OXIDATION ANNEAL TEMPERATURE ON RADIATION-INDUCED CHARGE TRAPPING IN METAL-OXIDE-SEMICONDUCTOR DEVICES
SCHWANK, JR
FLEETWOOD, DM
APPLIED PHYSICS LETTERS, 1988, 53 (09) : 770 - 772
[29] EVOLUTION OF CAPTURE CROSS-SECTION OF RADIATION-INDUCED INTERFACE TRAPS IN MOSFETS AS STUDIED BY A RAPID CHARGE PUMPING TECHNIQUE
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BALASINSKI, A
MA, TP
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Shaneyfelt, MR
Fleetwood, DM
Meisenheimer, TL
Schwank, JR
Schrimpf, RD
Dodd, PE
Gusev, EP
D'Emic, C
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