Ferromagnetic relaxation in spin valves with picoscale antiferromagnetic layers

被引：1
|
作者：
Moyerman, S. M. [1 ]
Gannett, W.
Borchers, J. A.
Doucet, M.
Carey, M. J.
Sparks, P. D.
Eckert, J. C.
机构：
[1] Harvey Mudd Coll, Dept Phys, Claremont, CA 91711 USA
[2] NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA
[3] Hitachi Global Storage Technol, San Jose Res Ctr, San Jose, CA 95120 USA
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2006年 / 42卷 / 10期
基金：
美国国家科学基金会;
关键词：
antiferromagnetic (AFM) materials; giant magnetoresistance (GMR); interface magnetism;
D O I：
10.1109/TMAG.2006.879731
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the mechanism of weak exchange bias for a spin valve with threshold layer antiferrornagnetic (AFM) thickness using giant magnetoresistance (GMR) and polarized neutron reflectometry (PNR). Results show that the sample exhibits instantaneous switching of the free layer followed by a gradual reorientation of the magnetization in the pinned ferromagnetic layer via domain wall formation. During subsequent field cycles, we found that relaxation in the pinned ferromagnetic (FM) layer is induced not only by an increasing field, but also in a static field over a relatively long time scale.
引用
收藏
页码：2630 / 2632
页数：3
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