Growth of AlN nanowires by metal organic chemical vapour deposition

被引:35
|
作者
Cimalla, V [1 ]
Foerster, C [1 ]
Cengher, D [1 ]
Tonisch, K [1 ]
Ambacher, O [1 ]
机构
[1] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98693 Ilmenau, Germany
来源
关键词
D O I
10.1002/pssb.200565205
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
AlN nanowires with a diameter of 20 nm were grown stochastically by the vapour-liquid-solid (VLS) method. At low temperatures below 1000 degrees C the Kirkendall effect during the alloying of aluminium and the catalyst resulted in the formation of three-dimensional nanostructures like lamellas and nano flowers. The high temperatures above 1000 degrees C, which are necessary to grow the nanowires complicate the control of their formation. Small catalyst droplets of 20 nm diameter are not stable due to their evaporation. Thus, in contrast to the classical approach to grow a single nano wire out of one droplet, we grew dense networks of nanowires inside larger 3D structures with diameters up to 5 gym. Depending on the growth temperature and the droplet geometry the nanowires inside of these networks are connected by angles of 90 degrees ("cubic") or 120 degrees ("hexagonal").
引用
收藏
页码:1476 / 1480
页数:5
相关论文
共 50 条
  • [41] Fabrication and application potential of ZnO nanowires grown on GaAs(002) substrates by metal-organic chemical vapour deposition
    Lee, WN
    Jeong, MC
    Myoung, JM
    [J]. NANOTECHNOLOGY, 2004, 15 (03) : 254 - 259
  • [42] Effect of doped substrates on the growth of GaAs nanowires via metal organic chemical vapor deposition
    Liu, Yan
    Peng, Yan
    Guo, Jingwei
    La, Dongsheng
    Xu, Zhaopeng
    Wang, Haiyan
    [J]. AIP ADVANCES, 2017, 7 (08)
  • [43] Self-Seeded Growth of GaAs Nanowires by Metal-Organic Chemical Vapor Deposition
    Ermez, Sema
    Jones, Eric J.
    Crawford, Samuel C.
    Gradecak, Silvija
    [J]. CRYSTAL GROWTH & DESIGN, 2015, 15 (06) : 2768 - 2774
  • [44] Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition
    Vilasam, Aswani Gopakumar Saraswathy
    Prasanna, Ponnappa Kechanda
    Yuan, Xiaoming
    Azimi, Zahra
    Kremer, Felipe
    Jagadish, Chennupati
    Chakraborty, Sudip
    Tan, Hark Hoe
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (02) : 3395 - 3403
  • [45] Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition
    Kim, Hee Jin
    Choi, Suk
    Yoo, Dongwon
    Ryou, Jae-Hyun
    Dupuis, Russell D.
    Dalmau, R. F.
    Lu, P.
    Sitar, Z.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (02)
  • [46] Indium surfactant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition
    Keller, S
    Heikman, S
    Ben-Yaacov, I
    Shen, L
    DenBaars, SP
    Mishra, UK
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 775 - 778
  • [47] Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal-organic chemical vapor deposition
    Wu, Qingqing
    Yan, Jianchang
    Zhang, Liang
    Chen, Xiang
    Wei, Tongbo
    Li, Yang
    Liu, Zhiqiang
    Wei, Xuecheng
    Zhang, Yun
    Wang, Junxi
    Li, Jinmin
    [J]. CRYSTENGCOMM, 2017, 19 (39): : 5849 - 5856
  • [48] Lateral growth on GaSb(111)B and GaSb(001) by metal-organic chemical vapour deposition
    Bonnot, R.
    Coudray, P.
    Giani, A.
    Gouskov, A.
    Bougnot, G.
    [J]. Materials science & engineering. B, Solid-state materials for advanced technology, 1991, B9 (1-3): : 101 - 104
  • [49] Growth of ZnO films under different oxygen partial pressures by metal organic chemical vapour deposition
    Wang, C.
    Yang, X.
    Liu, B.
    Zhao, C.
    Tang, W.
    Yang, J.
    Gao, X.
    Liang, H.
    Zhao, J.
    Sun, J.
    Du, G.
    [J]. ADVANCES IN LIQUID CRYSTALS, 2010, 428-429 : 458 - +
  • [50] Structural evolution of GaN nucleation layers during metal-organic chemical vapour deposition growth
    Degave, F
    Ruterana, P
    Nouet, G
    Je, JH
    Kim, CC
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 281 - 284