Low-Frequency Noise Analysis of the Impact of an LaO Cap Layer in HfSiON/Ta2C Gate Stack nMOSFETs

被引：10

作者：

Simoen, E. ^{[1
]}

Akheyar, A. ^{[1
]}

Rohr, E. ^{[1
]}

Mercha, A. ^{[1
]}

Claeys, C. ^{[2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, EE Dept, B-3001 Leuven, Belgium

来源：

ULSI PROCESS INTEGRATION 6 | 2009年 / 25卷 / 07期

关键词：

FIELD-EFFECT TRANSISTORS; INTERFACIAL LAYER; CMOS TRANSISTORS; OXIDE INTERFACE; MOS-TRANSISTORS; WORK-FUNCTIONS; METAL GATE; 1/F NOISE; MOSFETS; HFO2;

D O I：

10.1149/1.3203961

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this work, n-channel MOSFETs with a 0.5 nm LaO cap layer inserted between the 10 nm Ta2C metal gate and the HfSiON gate dielectric have been investigated, with emphasis on the low-frequency noise properties. It is shown that the capped devices show a roughly 0.3 V lowering of the threshold voltage and a significant increase in the maximum transconductance and the low-field mobility. At the same time, it is shown that the 1/f noise spectral density Si is not degraded by the introduction of the cap layer and even a lowering of the noise magnitude for thinner HfSiON layers has been observed. This points to a reduction of the effective gate oxide trap density which could result from the in-diffusion of La in the underlying gate stack.

引用

页码：237 / 245

页数：9

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