Enhancement of emission of InGaN/GaN multiple-quantum-well nanorods by coupling to Au-nanoparticle plasmons

被引：5

作者：

Xing, Jieying ^{[1
]}

Chen, Yinsong ^{[1
]}

Liu, Yuebo ^{[1
]}

Liang, Jiezhi ^{[1
]}

Chen, Jie ^{[1
]}

Ren, Yuan ^{[1
]}

Han, Xiaobiao ^{[1
]}

Zhong, Changming ^{[1
]}

Yang, Hang ^{[1
]}

Huang, Dejia ^{[1
]}

Hou, Yaqian ^{[1
]}

Wu, Zhisheng ^{[1
,2
]}

Liu, Yang ^{[1
,2
]}

Zhang, Baijun ^{[1
,2
]}

机构：

[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2018年 / 123卷 / 19期

关键词：

LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; FILM;

D O I：

10.1063/1.5022454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the enhancement of emission of InGaN/GaN multiple-quantum-well nanorods by nearly a factor of 2 by coupling them to localized surface plasmons of Au nano-particles (NPs). The Au NPs are fabricated in situ on the nanorods using a Ni/SiO2/Au/SiNx compound functional layer. This layer serves as a combination dry-etch mask for fabricating the nanorods and the Au NPs, as well as providing isolation necessary to prevent fluorescence quenching. Time-resolved photoluminescence measurements confirm that emission enhancement originates from the coupling. Published by AIP Publishing.

引用

页数：5

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