Magnetic field suppression of melt flow in crystal growth

被引：36
|
作者：
Dennis, BH
Dulikravich, GS
机构：
[1] Univ Texas, Dept Mech & Aerosp Engn, Arlington, TX 76019 USA
[2] Univ Tokyo, Inst Environm Studies, Grad Sch Frontier Sci, Bunkyo Ku, Tokyo 1138656, Japan
来源：
INTERNATIONAL JOURNAL OF HEAT AND FLUID FLOW | 2002年 / 23卷 / 03期
关键词：
D O I：
10.1016/S0142-727X(02)00174-1
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
The p-version least-squares finite element method was used for prediction of solidification from a melt under the influence of an externally applied magnetic field. The computational results indicate significantly different flow-field patterns and thermal fields in the melt and the accrued solid in the cases of full gravity, reduced gravity, and an applied uniform magnetic field. (C) 2002 Published by Elsevier Science Inc.
引用
收藏
页码：269 / 277
页数：9
相关论文
共 50 条
  • [11] Numerical and experimental modeling of the melt flow in a traveling magnetic field for vertical gradient freeze crystal growth
    Galindo, V.
    Grants, I.
    Lantzsch, R.
    Paetzold, O.
    Gerbeth, G.
    JOURNAL OF CRYSTAL GROWTH, 2007, 303 (01) : 258 - 261
  • [12] The effect of far field flow on a spherical crystal growth in the undercooled melt
    M.Chen School of Applied Sciences
    Acta Mechanica Sinica, 2008, 24 (06) : 681 - 689
  • [13] The effect of far field flow on a spherical crystal growth in the undercooled melt
    Chen, Mingwen
    Wang, Zidong
    Xie, Jianxin
    Xu, Jian-Jun
    ACTA MECHANICA SINICA, 2008, 24 (06) : 681 - 689
  • [14] The effect of far field flow on a spherical crystal growth in the undercooled melt
    Mingwen Chen
    Zidong Wang
    Jianxin Xie
    Jian-Jun Xu
    Acta Mechanica Sinica, 2008, 24 : 681 - 689
  • [15] Modelling of the isothermal melt flow due to rotating magnetic fields in crystal growth
    Barz, RU
    Gerbeth, G
    Wunderwald, U
    Buhrig, E
    Gelfgat, YM
    JOURNAL OF CRYSTAL GROWTH, 1997, 180 (3-4) : 410 - 421
  • [16] Effects of Induced Current in Crystals on the Melt Flow and the Melt-Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field
    Chen, Songsong
    Liu, Wenkai
    Wen, Zhican
    Liu, Yun
    Jiang, Fuman
    Xue, Zhongying
    Wei, Xing
    Li, Wei
    CRYSTAL GROWTH & DESIGN, 2023, 23 (06) : 4480 - 4490
  • [17] Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field
    Sun, Chenguang
    Ai, Xingtian
    Zhang, Hui
    Chou, Hungpang
    Lyu, Huiyun
    Chen, Guifeng
    COATINGS, 2023, 13 (09)
  • [18] FLOW CONTROL USING ALTERNATING MAGNETIC FIELDS DURING CRYSTAL GROWTH FROM A MELT
    Huang, Yue
    Davis, Kenneth E.
    Houchens, Brent C.
    PROCEEDINGS OF THE ASME INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION - 2012, VOL 7, PTS A-D, 2013, : 35 - 44
  • [19] Three dimensional simulation of melt flow in Czochralski crystal growth with steady magnetic fields
    Cen, Xianrong
    Li, Y. S.
    Zhan, Jiemin
    JOURNAL OF CRYSTAL GROWTH, 2012, 340 (01) : 135 - 141
  • [20] EFFECT OF FAR-FIELD FLOW ON THE GROWTH OF COLUMNAR CRYSTAL IN TERNARY UNDERCOOLED MELT
    Fan, Hailong
    Chen, Mingwen
    Shan, Yanyan
    SURFACE REVIEW AND LETTERS, 2020, 27 (07)
12345