A patterned SOI by masked anneal for system-on-chip applications

被引：0

作者：

Cohen, GM ^{[1
]}

Sadana, DK ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY | 2002年 / 686卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a method for fabricating pattern silicon-on-insulator (SOI) wafers that exploit internal thermal oxidation (ITOX) to control the BOX formation. We demonstrated the process by fabricating a pattern SOI having two different buried oxides (BOX) thickness. We also show that by using a very low oxygen dose the BOX call be quenched in the masked regions, while maintaining a continuous BOX in unmasked regions. Very low damage forms at the transition region from thick to thin BOX. Due to the oxygen diffusion the smallest patterned box feature we could obtain was limited to > 0.5 micron.

引用

页码：53 / 58

页数：6

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