Spin-dependent optical processes in II-VI diluted magnetic semiconductor nanostructures

被引：0
|
作者：
Oka, Y [1 ]
Kayanuma, K [1 ]
Sakuma, M [1 ]
Uetake, A [1 ]
Souma, I [1 ]
Chen, ZH [1 ]
Murayama, A [1 ]
机构：
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS III - ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2004年 / 799卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanostructures of diluted magnetic semiconductors have potential possibility for the spin electronics application due to their large magneto-optical effects and the quantum confinement effects for band electrons. We have fabricated quantum wells and quantum dots by H-VI diluted magnetic semiconductors of Cd1-xMnxTe, Zn1-xMnxTe and Zn1-x-yCdyMnxSe. These nanostructures showed spin injection, spin switching and ultrafast spin relaxation processes derived in the confined nanostructures. Hybrid structures consisting of diluted magnetic semiconductor and Co showed Mn spin polarizations induced by the Co wire shape.
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页码：269 / 280
页数：12
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