Spin-dependent tunneling in diluted magnetic semiconductor trilayer structures

被引：6
|
作者：
Krstajic, P [1 ]
Peeters, FM [1 ]
机构：
[1] Univ Antwerp, Dept Fys, B-2020 Antwerp, Belgium
来源：
PHYSICAL REVIEW B | 2005年 / 72卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.72.125350
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tunneling of holes through a trilayer structure made of two diluted magnetic semiconductors, (Ga,Mn)As, separated by a thin layer of nonmagnetic AlAs is investigated. The problem is treated within the 6x6 Luttinger-Kohn model for valence bands with the split-off band included. The influence of the spin-orbit coupling is pronounced as the spin-splitting Delta(ex) is comparable with the split-off Delta(SO) splitting. It is assumed that direct tunneling is the dominant mechanism due to the high quality of the tunnel junctions. Our theoretical results predict the correct order of magnitude for the tunneling magnetoresistance ratio, but various other effects, such as scattering on impurities and defects, should be included in order to realize a quantitative agreement with experiment.
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页数：6
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